Intel First 3D Tri-Gate Transistor | Technology Announcement:
Technology Announcement - Press Release; Inter Corporations just announces their newest 3D Tri-Gate Transistor at a press conference this morning May 5th,2011, Intel revealed what they claim is the most significant technology announcement of the year, fueling Moore’s Law for years to come.
They Claim that this Inventions is the first since over past 50 years in the history of Technology History as they says in a press release, a 3D Tri-Gate transistor that will allow the company to keep making smaller, yet more powerful chips for the smallest mobile devices/handhelds to powerful cloud-based servers, extending across their entire product line. For the first time since the invention of silicon transistors over 50 years ago, transistors using a 3D structure will be put into high-volume manufacturing. The transistors will use 50 percent less power, conduct more current and provide 37 percent more speed than their 2D counterparts.
Intel also said that the new technology will make its debut in its 22nm Ivy Bridge CPUs, which will go into mass production in the second half of the year.
Bellow is the First part of the above mentions press release :
Intel Reinvents Transistors Using New 3-D Structure
Posted by IntelPR on May 4, 2011 10:05:29 AM NEWS HIGHLIGHTS
Intel announces a major technical breakthrough and historic innovation in microprocessors: the world’s first 3-D transistors, called Tri-Gate, in a production technology.
The transition to 3-D Tri-Gate transistors sustains the pace of technology advancement, fueling Moore’s Law for years to come.
An unprecedented combination of performance improvement and power reduction to enable new innovations across a range of future 22nm-based devices from the smallest handhelds to powerful cloud-based servers.
Intel demonstrates a 22nm microprocessor – codenamed “Ivy Bridge” – that will be the first high-volume chip to use 3-D Tri-Gate transistors.
SANTA CLARA, Calif., May 4, 2011 – Intel Corporation today announced a significant breakthrough in the evolution of the transistor, the microscopic building block of modern electronics. For the first time since the invention of silicon transistors over 50 years ago, transistors using a three-dimensional structure will be put into high-volume manufacturing. Intel will introduce a revolutionary 3-D transistor design called Tri-Gate, first disclosed by Intel in 2002, into high-volume manufacturing at the 22-nanometer (nm) node in an Intel chip codenamed “Ivy Bridge.” A nanometer is one-billionth of a meter.
The three-dimensional Tri-Gate transistors represent a fundamental departure from the two-dimensional planar transistor structure that has powered not only all computers, mobile phones and consumer electronics to-date, but also the electronic controls within cars, spacecraft, household appliances, medical devices and virtually thousands of other everyday devices for decades.
“Intel’s scientists and engineers have once again reinvented the transistor, this time utilizing the third dimension,” said Intel President and CEO Paul Otellini. “Amazing, world-shaping devices will be created from this capability as we advance Moore’s Law into new realms.”
The Full Page of the press release news can be found on their official website by pointing your browser to http://newsroom.intel.com/community/intel_newsroom/blog/2011/05/04/intel-reinvents-transistors-using
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